2015. 5. 12 1/2 semiconductor technical data MPS8050SC epitaxial planar npn transistor revision no : 0 high current application. feature h complementary to mps8550sc. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5 v collector current i c 1,200 ma collector power dissipation p c * 350 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? * p c : package mounted on 99.5% alumina (10 ? 8 ? 0.6 x ) characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =0.5ma, i e =0 40 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 25 - - v emitter-base breakdown voltage v (br)ebo i e =0.1ma, i c =0 5 - - v collector cut-off current i cbo v cb =35v, i e =0 - - 0.1 ua emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 ua dc current gain h fe v ce =1v, i c =100ma 200 - 300 collector-emitter saturation voltage v ce(sat) i c =800ma, i b =80ma - - 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b =80ma - - 1.2 v transition frequency f t v ce =6v, i c =20ma, f=30mhz 150 - - mhz
2015. 5. 12 2/2 MPS8050SC revision no : 0
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